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Effect of Heat Treatment on Electrical Properties of Polycrystalline CuInSe₂ Thin Films Prepared by Two Methods
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Physical Properties of Electrodeposited Copper Indium Diselenide Thin Films and Junction Realization
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Polysilicon Technologies for Large Area Displays
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Thermal Stability of Glass Substrates During Solid Phase Crystallisation of a-Si on Glass by Rapid Thermal Annealing
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Polycrystalline Silicon Thin Film Transistors for Liquid Crystal Displays
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Performance of Poly-Si Thin Film Transistors Fabricated by Excimer-Laser Annealing of SiH₄- and Si₂H₆- Source Low Pressure Vapor Deposited a-Si Films with or without Solid-Phase Crystallization
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Modelling and Optimisation of Poly-Si Thin Film Transistors for Flat Panel Displays
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HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38Polysilicon Technologies for Large Area Displays

Polysilicon Technologies for Large Area Displays

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Polycrystalline Semiconductors III

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Periodical:

Solid State Phenomena (Volumes 37-38)

Pages:

535-546

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38.535

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Cite this paper

Online since:

March 1994

Authors:

N. Duhamel, B. Loisel

Keywords:

Hydrogenation, Leakage Current, Rapid Thermal Annealing (RTA), Thin Film Transistor

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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