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HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38Performance of Poly-Si Thin Film Transistors...

Performance of Poly-Si Thin Film Transistors Fabricated by Excimer-Laser Annealing of SiH₄- and Si₂H₆- Source Low Pressure Vapor Deposited a-Si Films with or without Solid-Phase Crystallization

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Polycrystalline Semiconductors III

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Periodical:

Solid State Phenomena (Volumes 37-38)

Pages:

565-570

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38.565

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Online since:

March 1994

Authors:

M. Fuse, I. Asai, M. Hirota, Yoshinari Miyamoto

Keywords:

a-Si Deposition, Excimer Laser Annealing, Grain Size, Low Pressure Chemical Vapor Deposition, Solid-Phase Crystallization, Thin Film Transistor

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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