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HomeSolid State PhenomenaSolid State Phenomena Vols. 47-48Interface Structure and Dislocation Formation in...

Interface Structure and Dislocation Formation in InGaAs/GaAs SQWs Grown with Different In Content on Vicinal Substrates

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Gettering and Defect Engineering in Semiconductor Technology VI

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Periodical:

Solid State Phenomena (Volumes 47-48)

Pages:

553-560

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.47-48.553

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Online since:

July 1995

Authors:

Cesare Frigeri, A. Di Paola, D.M. Ritchie, F. Longo, A. Brinciotti, M. Riva, F. Vidimari

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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