Interface Structure and Dislocation Formation in InGaAs/GaAs SQWs Grown with Different In Content on Vicinal Substrates

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Periodical:

Solid State Phenomena (Volumes 47-48)

Edited by:

H. Richter, M. Kittler and C. Claeys

Pages:

553-560

DOI:

10.4028/www.scientific.net/SSP.47-48.553

Citation:

C. Frigeri et al., "Interface Structure and Dislocation Formation in InGaAs/GaAs SQWs Grown with Different In Content on Vicinal Substrates", Solid State Phenomena, Vols. 47-48, pp. 553-560, 1996

Online since:

July 1995

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$35.00

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