The Relaxation and Diffusion Behaviour of Strained Si1-xGex Layers on Si Substrates at High Temperature under Hydrostatic Pressure
p.517
p.517
Critical Points of Strained Si1-yCy Layers on Si(001)
p.523
p.523
Dislocation-Related Photoluminescence in Graded SiGe Buffer Layers Grown by APCVD
p.529
p.529
Elastic Relaxation of Pseudomorphic Strain in Quantum Dots
p.535
p.535
Electrical Activity of Misfit Dislocations in GaAsSb/GaAs Heterojunctions
p.541
p.541
Twin Formation during Epitaxial Growth of InP on Si
p.547
p.547
Interface Structure and Dislocation Formation in InGaAs/GaAs SQWs Grown with Different In Content on Vicinal Substrates
p.553
p.553
Determination of Interface Structure and Bonding by Z-Contrast STEM
p.561
p.561
Tomographic Atom Probe: A New Tool for Nanoscale Characterisation
p.573
p.573
Electrical Activity of Misfit Dislocations in GaAsSb/GaAs Heterojunctions
Abstract:
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Periodical:
Solid State Phenomena (Volumes 47-48)
Pages:
541-546
Citation:
Online since:
July 1995
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Сopyright:
© 1996 Trans Tech Publications Ltd. All Rights Reserved
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