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The Relaxation and Diffusion Behaviour of Strained Si_1-xGe_x Layers on Si Substrates at High Temperature under Hydrostatic Pressure
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Critical Points of Strained Si_1-yC_y Layers on Si(001)
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Dislocation-Related Photoluminescence in Graded SiGe Buffer Layers Grown by APCVD
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Elastic Relaxation of Pseudomorphic Strain in Quantum Dots
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Electrical Activity of Misfit Dislocations in GaAsSb/GaAs Heterojunctions
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HomeSolid State PhenomenaSolid State Phenomena Vols. 47-48Dislocation-Related Photoluminescence in Graded...

Dislocation-Related Photoluminescence in Graded SiGe Buffer Layers Grown by APCVD

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Gettering and Defect Engineering in Semiconductor Technology VI

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Periodical:

Solid State Phenomena (Volumes 47-48)

Pages:

529-534

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.47-48.529

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Online since:

July 1995

Authors:

H.B. Erzgräber, G. Kissinger, G. Morgenstern, T. Morgenstern

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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