The Relaxation and Diffusion Behaviour of Strained Si1-xGex Layers on Si Substrates at High Temperature under Hydrostatic Pressure

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Periodical:

Solid State Phenomena (Volumes 47-48)

Edited by:

H. Richter, M. Kittler and C. Claeys

Pages:

517-522

DOI:

10.4028/www.scientific.net/SSP.47-48.517

Citation:

P. Zaumseil et al., "The Relaxation and Diffusion Behaviour of Strained Si1-xGex Layers on Si Substrates at High Temperature under Hydrostatic Pressure", Solid State Phenomena, Vols. 47-48, pp. 517-522, 1996

Online since:

July 1995

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$35.00

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