Analysis of Σ=3 and Σ=9 Twin Boundaries in Three-Crystal Silicon Ingots
p.455
p.455
Band Structure Engineering in Si-Ge Structures
p.463
p.463
Diffusion Effects and Luminescence in Thin SiGe/Si Layers
p.473
p.473
Investigation of the Substrate / Epitaxial Interface of Si/Si1-xGexGrown by LPCVD
p.485
p.485
The Effect of Interface Engineering and Wave Function Localisation on Optical Response in Imperfect Type I and Type II Quantum Well Structures
p.491
p.491
Mechanisms of Dislocation Generation in Heterostructures Based on SiGe Alloys
p.497
p.497
Elastic and Plastic Stress Relaxation in Stripes and Circular Mesas
p.503
p.503
Composition Dependence of Hardness and Elastic Modulus in Si-Ge Measured by Nanoindentation - Possible Consequences for Elasto-Plastic Relaxation and Diffusion
p.509
p.509
The Relaxation and Diffusion Behaviour of Strained Si1-xGex Layers on Si Substrates at High Temperature under Hydrostatic Pressure
p.517
p.517
The Effect of Interface Engineering and Wave Function Localisation on Optical Response in Imperfect Type I and Type II Quantum Well Structures
Abstract:
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Periodical:
Solid State Phenomena (Volumes 47-48)
Pages:
491-496
Citation:
Online since:
July 1995
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Сopyright:
© 1996 Trans Tech Publications Ltd. All Rights Reserved
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