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Paper Titles
Band Structure Engineering in Si-Ge Structures
p.463
Diffusion Effects and Luminescence in Thin SiGe/Si Layers
p.473
Investigation of the Substrate / Epitaxial Interface of Si/Si1-xGexGrown by LPCVD
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The Effect of Interface Engineering and Wave Function Localisation on Optical Response in Imperfect Type I and Type II Quantum Well Structures
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Mechanisms of Dislocation Generation in Heterostructures Based on SiGe Alloys
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Elastic and Plastic Stress Relaxation in Stripes and Circular Mesas
p.503
Composition Dependence of Hardness and Elastic Modulus in Si-Ge Measured by Nanoindentation - Possible Consequences for Elasto-Plastic Relaxation and Diffusion
p.509
The Relaxation and Diffusion Behaviour of Strained Si1-xGex Layers on Si Substrates at High Temperature under Hydrostatic Pressure
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Critical Points of Strained Si1-yCy Layers on Si(001)
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Mechanisms of Dislocation Generation in Heterostructures Based on SiGe Alloys

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Periodical:

Solid State Phenomena (Volumes 47-48)

Pages:

497-502

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.47-48.497

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Online since:

July 1995

Authors:

V.I. Vdovin, M.G. Mil'vidskii, T.G. Yugova

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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