Investigation of the Substrate / Epitaxial Interface of Si/Si1-xGexGrown by LPCVD

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Periodical:

Solid State Phenomena (Volumes 47-48)

Edited by:

H. Richter, M. Kittler and C. Claeys

Pages:

485-490

DOI:

10.4028/www.scientific.net/SSP.47-48.485

Citation:

R. Loo et al., "Investigation of the Substrate / Epitaxial Interface of Si/Si1-xGexGrown by LPCVD", Solid State Phenomena, Vols. 47-48, pp. 485-490, 1996

Online since:

July 1995

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$35.00

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