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HomeSolid State PhenomenaSolid State Phenomena Vols. 47-48Analysis of Σ=3 and Σ=9 Twin Boundaries in...

Analysis of Σ=3 and Σ=9 Twin Boundaries in Three-Crystal Silicon Ingots

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Gettering and Defect Engineering in Semiconductor Technology VI

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Periodical:

Solid State Phenomena (Volumes 47-48)

Pages:

455-462

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.47-48.455

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Online since:

July 1995

Authors:

Antonio Castaldini, Daniela Cavalcoli, Anna Cavallini, G. Martinelli, D. Palmeri, Andrea Parisini, G. Sartori

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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