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HomeSolid State PhenomenaSolid State Phenomena Vols. 47-48Ion Beam Sputter Deposited Si0.8Ge0.2Epilayers:...

Ion Beam Sputter Deposited Si_0.8Ge_0.2Epilayers: Lattice Defects and Surface Topology

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Gettering and Defect Engineering in Semiconductor Technology VI

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Periodical:

Solid State Phenomena (Volumes 47-48)

Pages:

431-436

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.47-48.431

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Online since:

July 1995

Authors:

V. Demuth, W. Dorsch, Horst P. Strunk, M. Lyakas, M. Eizenberg, N. Mosleh, F. Meyer, C. Schwebel

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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