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Correlation between Dislocations and Electron Transport Properties in Si/SiGe
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Investigation of the Dislocation Motion in the Bulk SiGe Crystals
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Ion Beam Sputter Deposited Si_0.8Ge_0.2Epilayers: Lattice Defects and Surface Topology
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GaAIAs Lattice Parameter Dependence on Free Electron Concentration
p.437

Relation between Structural and Carrier Recombination Properties in As-Rich GaAs
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Investigation of Microdefects in Multicrystalline Silicon for Photovoltaic Applications
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Analysis of Σ=3 and Σ=9 Twin Boundaries in Three-Crystal Silicon Ingots
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Band Structure Engineering in Si-Ge Structures
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HomeSolid State PhenomenaSolid State Phenomena Vols. 47-48GaAIAs Lattice Parameter Dependence on Free...

GaAIAs Lattice Parameter Dependence on Free Electron Concentration

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Gettering and Defect Engineering in Semiconductor Technology VI

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Periodical:

Solid State Phenomena (Volumes 47-48)

Pages:

437-442

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.47-48.437

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Online since:

July 1995

Authors:

Jadwiga Bak-Misiuk, M. Leszczyński, J.Z. Domagała, J. Trela

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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