Investigation of the Substrate / Epitaxial Interface of Si/Si1-xGexGrown by LPCVD
p.485
p.485
The Effect of Interface Engineering and Wave Function Localisation on Optical Response in Imperfect Type I and Type II Quantum Well Structures
p.491
p.491
Mechanisms of Dislocation Generation in Heterostructures Based on SiGe Alloys
p.497
p.497
Elastic and Plastic Stress Relaxation in Stripes and Circular Mesas
p.503
p.503
Composition Dependence of Hardness and Elastic Modulus in Si-Ge Measured by Nanoindentation - Possible Consequences for Elasto-Plastic Relaxation and Diffusion
p.509
p.509
The Relaxation and Diffusion Behaviour of Strained Si1-xGex Layers on Si Substrates at High Temperature under Hydrostatic Pressure
p.517
p.517
Critical Points of Strained Si1-yCy Layers on Si(001)
p.523
p.523
Dislocation-Related Photoluminescence in Graded SiGe Buffer Layers Grown by APCVD
p.529
p.529
Elastic Relaxation of Pseudomorphic Strain in Quantum Dots
p.535
p.535
Composition Dependence of Hardness and Elastic Modulus in Si-Ge Measured by Nanoindentation - Possible Consequences for Elasto-Plastic Relaxation and Diffusion
Abstract:
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Periodical:
Solid State Phenomena (Volumes 47-48)
Pages:
509-516
Citation:
Online since:
July 1995
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Сopyright:
© 1996 Trans Tech Publications Ltd. All Rights Reserved
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