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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52Structural Characterization of Poly-SiC Grown on...

Structural Characterization of Poly-SiC Grown on SiO₂/Si by Metalorganic Chemical Vapor Deposition

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

217-224

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.217

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Online since:

May 1996

Authors:

J. Rodríguez-Viejo, J. Stoemenos, Narcis Clavaguera, Maria T. Clavaguera-Mora

Keywords:

Growth Mode, Low Pressure Metal-Organic Chemical Vapor Deposition, Microtwins, Poly-SiC, Thin Film

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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