Paper Titles

On the Nanostructure of Hydrogenated Silicon
p.167

Time Resolved Reflectivity Studies of Phase Transitions in Polycrystalline Si Induced by Excimer Laser Irradiation
p.173

Characterization of Low Pressure Chemical Vapor Deposited Polysilicon Using Ellipsometry
p.179

Correlation between the Hydrogen Bonding Configurations in Amorphous Sputtered Silicon and the Crystallized Material Microstructure
p.187

Growth and Defect Formation in Thin Ge and Si_0.8Ge_0.2 Layers Ion Beam Sputter Deposited on Si(001)
p.193

Microstructure Influence on the First Stage of the Oxidation Process in Polycrystalline SiGe Layers
p.199

Surface Defect States of Crystallites in Sputtered Amorphous Silicon Films
p.205

n-Type Polydrystalline Silicon for Luminescent Porous Silicon Films
p.211

Structural Characterization of Poly-SiC Grown on SiO₂/Si by Metalorganic Chemical Vapor Deposition
p.217

HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52Growth and Defect Formation in Thin Ge and...

Growth and Defect Formation in Thin Ge and Si_0.8Ge_0.2 Layers Ion Beam Sputter Deposited on Si(001)

Article Preview

Abstract:

You might also be interested in these eBooks

Polycrystalline Semiconductors IV

Info:

Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

193-198

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.193

Citation:

Cite this paper

Online since:

May 1996

Authors:

W. Dorsch, V. Demuth, Horst P. Strunk, N. Mosleh, F. Meyer, C. Schwebel

Keywords:

Atomic Force Microscope (AFM), Defect Formation, Heteroepitaxy, Pagoda Defects, TEM

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1996 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: