Growth and Defect Formation in Thin Ge and Si0.8Ge0.2 Layers Ion Beam Sputter Deposited on Si(001)

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Periodical:

Solid State Phenomena (Volumes 51-52)

Edited by:

S. Pizzini, H.P. Strunk and J.H. Werner

Pages:

193-198

DOI:

10.4028/www.scientific.net/SSP.51-52.193

Citation:

W. Dorsch et al., "Growth and Defect Formation in Thin Ge and Si0.8Ge0.2 Layers Ion Beam Sputter Deposited on Si(001)", Solid State Phenomena, Vols. 51-52, pp. 193-198, 1996

Online since:

May 1996

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$35.00

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