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On the Nanostructure of Hydrogenated Silicon
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Time Resolved Reflectivity Studies of Phase Transitions in Polycrystalline Si Induced by Excimer Laser Irradiation
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Characterization of Low Pressure Chemical Vapor Deposited Polysilicon Using Ellipsometry
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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52Time Resolved Reflectivity Studies of Phase...

Time Resolved Reflectivity Studies of Phase Transitions in Polycrystalline Si Induced by Excimer Laser Irradiation

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

173-178

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.173

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Online since:

May 1996

Authors:

I. Ulrych, M. Cerník, K.M.A. El-Kader, P. Prikryl, R. Cerný, Z. Chvoj, V. Cháb

Keywords:

Phase Transition, Polycrystalline Si, Time Resolved Reflectivity TRR

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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