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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52Structural Studies of Annealing Effects on...

Structural Studies of Annealing Effects on Semi-Insulating Polycrystalline Layers Obtained by Using Disilane

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

155-160

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.155

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Online since:

May 1996

Authors:

J.J. Pedroviejo, B. Garrido, J.R. Morante, E. Dehan, E. Scheid

Keywords:

Annealing, Disilane, FT-IR, LPCVD, Microcrystals, N₂O, RAMAN, SiO_x, SIPOS, TEM, X-Ray Photoelectron Spectroscopy (XPS)

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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