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Structural Studies of Annealing Effects on Semi-Insulating Polycrystalline Layers Obtained by Using Disilane
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Growth of n-Type Microcrystalline Silicon at Different Plasma Excitation Frequencies
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On the Nanostructure of Hydrogenated Silicon
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Time Resolved Reflectivity Studies of Phase Transitions in Polycrystalline Si Induced by Excimer Laser Irradiation
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Characterization of Low Pressure Chemical Vapor Deposited Polysilicon Using Ellipsometry
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Correlation between the Hydrogen Bonding Configurations in Amorphous Sputtered Silicon and the Crystallized Material Microstructure
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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52On the Nanostructure of Hydrogenated Silicon

On the Nanostructure of Hydrogenated Silicon

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Abstract:

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

167-172

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.167

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Online since:

May 1996

Authors:

S.B. Aldabergenova, M. Albrecht, K. Tauasarov, D. Stenkamp, T.I. Taurbaev, B. Dietrich, Horst P. Strunk

Keywords:

Constant Photocurrent Method, High Resolution Transmission Electron Microscopy, Infra-Red Absorption, Large Interatomic Distances, Microstructure of Hydrogenated Silicon (Si:H), Raman Scattering, Urbach Parameter

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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