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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52

Solid State Phenomena Vols. 51-52

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52

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Table of Contents

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Paper Title Page

Preface

Annihilation of Self-Interstitials by Dislocations in Silicon as Studied by Gold Diffusion

Authors: G. Mariani, Bernard Pichaud, Eugene B. Yakimov

3

Formation of Electrical Activity of Dislocations in Si during Plastic Deformation

Authors: O.V. Kononchuk, V. Orlov, Olga V. Feklisova, Eugene B. Yakimov

15

Electronic and Electrical Properties of Polycrystalline Silicon: Effects of Grain Boundary Segregation

Authors: Y. Fujita, K. Kitakizaki, Kinichi Masuda-Jindo

21

Atomic Simulation Study of Gettering and Passivation in Polycrystalline Semiconductors

Authors: Kinichi Masuda-Jindo, Y. Fujita

27

The Switching Effects at Grain Boundaries Spontaneously Nucleating at the Crystallization Front of Shaped Silicon

Authors: A.K. Fedotov, A. Drozdovski, S. Shumski

33

Microcharacterization of Polycrystalline Semiconductors by Scanning Electron Microscopy in Electron Beam Induced Current Mode

Authors: Eugene B. Yakimov

39

Beam Injection Methods as Tools for Studying Extended Defects in Semiconductors: Characteristics and Capabilities

Authors: Antonio Castaldini, Anna Cavallini

51

Scanning Deep Level Transient Spectroscopy Measurements of Extended Defects in Silicon

Authors: K. Knobloch, Martin Kittler, Winfried Seifert, V. Higgs

63

Lifetime and Material Characteristics of Multicrystalline Silicon Measured with High Spatial Resolution

Authors: Stephan W. Glunz, C. Hebling, W. Warta

69

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