Preface
Annihilation of Self-Interstitials by Dislocations in Silicon as Studied by Gold Diffusion
p.3
p.3
Formation of Electrical Activity of Dislocations in Si during Plastic Deformation
p.15
p.15
Electronic and Electrical Properties of Polycrystalline Silicon: Effects of Grain Boundary Segregation
p.21
p.21
Atomic Simulation Study of Gettering and Passivation in Polycrystalline Semiconductors
p.27
p.27
The Switching Effects at Grain Boundaries Spontaneously Nucleating at the Crystallization Front of Shaped Silicon
p.33
p.33
Microcharacterization of Polycrystalline Semiconductors by Scanning Electron Microscopy in Electron Beam Induced Current Mode
p.39
p.39
Beam Injection Methods as Tools for Studying Extended Defects in Semiconductors: Characteristics and Capabilities
p.51
p.51
Scanning Deep Level Transient Spectroscopy Measurements of Extended Defects in Silicon
p.63
p.63
Annihilation of Self-Interstitials by Dislocations in Silicon as Studied by Gold Diffusion
Abstract:
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Periodical:
Solid State Phenomena (Volumes 51-52)
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3-14
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Online since:
May 1996
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© 1996 Trans Tech Publications Ltd. All Rights Reserved
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