Paper Titles

Annihilation of Self-Interstitials by Dislocations in Silicon as Studied by Gold Diffusion
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Formation of Electrical Activity of Dislocations in Si during Plastic Deformation
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Electronic and Electrical Properties of Polycrystalline Silicon: Effects of Grain Boundary Segregation
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Atomic Simulation Study of Gettering and Passivation in Polycrystalline Semiconductors
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The Switching Effects at Grain Boundaries Spontaneously Nucleating at the Crystallization Front of Shaped Silicon
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Microcharacterization of Polycrystalline Semiconductors by Scanning Electron Microscopy in Electron Beam Induced Current Mode
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Beam Injection Methods as Tools for Studying Extended Defects in Semiconductors: Characteristics and Capabilities
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Scanning Deep Level Transient Spectroscopy Measurements of Extended Defects in Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52Electronic and Electrical Properties of...

Electronic and Electrical Properties of Polycrystalline Silicon: Effects of Grain Boundary Segregation

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

21-26

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.21

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Online since:

May 1996

Authors:

Y. Fujita, K. Kitakizaki, Kinichi Masuda-Jindo

Keywords:

Deep Level, Electrical Resistivity, Grain Boundary Segregation, Hall Mobility, Impurity, Phase Shift Spectroscopy

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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