Paper Titles

Electronic and Electrical Properties of Polycrystalline Silicon: Effects of Grain Boundary Segregation
p.21

Atomic Simulation Study of Gettering and Passivation in Polycrystalline Semiconductors
p.27

The Switching Effects at Grain Boundaries Spontaneously Nucleating at the Crystallization Front of Shaped Silicon
p.33

Microcharacterization of Polycrystalline Semiconductors by Scanning Electron Microscopy in Electron Beam Induced Current Mode
p.39

Beam Injection Methods as Tools for Studying Extended Defects in Semiconductors: Characteristics and Capabilities
p.51

Scanning Deep Level Transient Spectroscopy Measurements of Extended Defects in Silicon
p.63

Lifetime and Material Characteristics of Multicrystalline Silicon Measured with High Spatial Resolution
p.69

On the Electrical Activity of Fe-Contaminated Silicon Bicrystals
p.75

Microdefects in Polycrystalline Silicon
p.81

HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52Beam Injection Methods as Tools for Studying...

Beam Injection Methods as Tools for Studying Extended Defects in Semiconductors: Characteristics and Capabilities

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

51-62

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.51

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Online since:

May 1996

Authors:

Antonio Castaldini, Anna Cavallini

Keywords:

Contrast, Copper Precipitates, Defect Strength, Electrical Activity, Electron Beam Induced Current (EBIC), Generation Volume, Impurity, Optical Beam Induced Current OBIC, Resolution

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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