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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52Scanning Deep Level Transient Spectroscopy...

Scanning Deep Level Transient Spectroscopy Measurements of Extended Defects in Silicon

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Abstract:

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

63-68

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.63

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Online since:

May 1996

Authors:

K. Knobloch, Martin Kittler, Winfried Seifert, V. Higgs

Keywords:

Deep Level, EBIC, Electrical Activity, Extended Defects, Scanning-DLTS

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Сopyright:

© 1996 Trans Tech Publications Ltd. All Rights Reserved

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