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Beam Injection Methods as Tools for Studying Extended Defects in Semiconductors: Characteristics and Capabilities
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Scanning Deep Level Transient Spectroscopy Measurements of Extended Defects in Silicon
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Lifetime and Material Characteristics of Multicrystalline Silicon Measured with High Spatial Resolution
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On the Electrical Activity of Fe-Contaminated Silicon Bicrystals
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Microdefects in Polycrystalline Silicon
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Investigations for the Detection of Microdefects in Cast Multicrystalline Silicon
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Dislocation-Related Absorption, Photoluminescence and Birefringence in Deformed n-ZnSe Crystals
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Tight-Binding Total Energy Calculation for Fe, Co and Ni in Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52On the Electrical Activity of Fe-Contaminated...

On the Electrical Activity of Fe-Contaminated Silicon Bicrystals

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Abstract:

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

75-80

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.75

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Online since:

May 1996

Authors:

A. Ihlal, Richard Rizk

Keywords:

Bi-Crystal, DLTS, EBIC, Grain Boundary, Interface States (or Traps), Iron Silicide, Precipitation, Recombining Centers

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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