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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52

Solid State Phenomena Vols. 51-52

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52

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Table of Contents

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Paper Title Page

Compensation Doping of Polysilicon Films for Stable Integrated Circuit Resistors

Authors: M. Rydberg, U. Smith, A. Söderbärg, H. Hansson

561

Physical Properties of Polysilicon Diodes Derived from a Smart Power Technology

Authors: I. Claverie, J. Oualid, J. Mille, O. Bonnaud, Robert Jérisian

567

Realization of Power Polysilicon Diodes on Indium-Tin-Oxide Substrates for Holographic Commutation Matrix

Authors: D. Briand, M. Sarret, T. Mohammed-Brahim, S. Mottet, O. Bonnaud

573

Manipulating the Electrical and Optical Properties of Polycrystalline ZnO Based Thin Films

Authors: V. Srikant, David R. Clarke

579

Analysis of Hot-Carrier Effects, 'Kink' Effect and Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors

Authors: G. Fortunato

585

Thermal and Field-Induced Generation Mechanisms in Polysilicon Thin Film Transistors: A Comparison between n-Channel and p-Channel Devices

Authors: G. Tallarida, P. Migliorato, M. Quinn, C. Reita

597

Thin Polycrystalline Silicon Films Annealed at 950°C: Structural and Electrical Properties and Application to Thin Film Transistors

Authors: A.C. Salaün, B. Fortin, T. Mohammed-Brahim, K. Kis-Sion, L. Haji, O. Bonnaud

603

Deposition and Characterisation of Polycrystalline Silicon for Low Temperature Thin Film Transistor Fabrication

Authors: L.J. Quinn, B. Lee, P.T. Baine, S.J.N. Mitchell, B.M. Armstrong, H.S. Gamble

609

Novel Polysilicon Thin Film Transistor with Buffer Oxide

Authors: Byeong Hyeon Min, C.M. Park, Min Koo Han

615

Leakage Currents in Poly-Si Thin Film Transistors

Authors: S.D. Brotherton, J.R. Ayres, M.J. Trainor

621

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