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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52Realization of Power Polysilicon Diodes on...

Realization of Power Polysilicon Diodes on Indium-Tin-Oxide Substrates for Holographic Commutation Matrix

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

573-578

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.573

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Online since:

May 1996

Authors:

D. Briand, M. Sarret, T. Mohammed-Brahim, S. Mottet, O. Bonnaud

Keywords:

I-V Characteristic, LPCVD, Simulation, Transparent Conducting Oxide (TCO)

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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