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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52Thin Polycrystalline Silicon Films Annealed at...

Thin Polycrystalline Silicon Films Annealed at 950°C: Structural and Electrical Properties and Application to Thin Film Transistors

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Abstract:

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

603-608

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.603

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Online since:

May 1996

Authors:

A.C. Salaün, B. Fortin, T. Mohammed-Brahim, K. Kis-Sion, L. Haji, O. Bonnaud

Keywords:

In Situ Crystallisation, Silicon Dioxide Interface, TEM, Thermal Annealing, Thin Film Transistor, X-Ray Diffraction (XRD)

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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