Thin Polycrystalline Silicon Films Annealed at 950°C: Structural and Electrical Properties and Application to Thin Film Transistors

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Periodical:

Solid State Phenomena (Volumes 51-52)

Edited by:

S. Pizzini, H.P. Strunk and J.H. Werner

Pages:

603-608

DOI:

10.4028/www.scientific.net/SSP.51-52.603

Citation:

A.C. Salaün et al., "Thin Polycrystalline Silicon Films Annealed at 950°C: Structural and Electrical Properties and Application to Thin Film Transistors", Solid State Phenomena, Vols. 51-52, pp. 603-608, 1996

Online since:

May 1996

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Price:

$35.00

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