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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52Thermal and Field-Induced Generation Mechanisms in...

Thermal and Field-Induced Generation Mechanisms in Polysilicon Thin Film Transistors: A Comparison between n-Channel and p-Channel Devices

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Abstract:

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

597-602

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.597

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Online since:

May 1996

Authors:

G. Tallarida, P. Migliorato, M. Quinn, C. Reita

Keywords:

Off-Current, Phonon-Assisted Tunneling, Thin Film Transistor

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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