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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52Physical Properties of Polysilicon Diodes Derived...

Physical Properties of Polysilicon Diodes Derived from a Smart Power Technology

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Abstract:

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

567-572

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.567

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Online since:

May 1996

Authors:

I. Claverie, J. Oualid, J. Mille, O. Bonnaud, Robert Jérisian

Keywords:

Clamp, Polysilicon Diodes, Rectifier, Smart-Power, Temperature Sensors

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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