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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52Characterization of Low Pressure Chemical Vapor...

Characterization of Low Pressure Chemical Vapor Deposited Polysilicon Using Ellipsometry

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Abstract:

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

179-186

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.179

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Online since:

May 1996

Authors:

L. Asinovsky, S. Fox, E. Karagiannis, M. Schroth, J.J. Sweeney

Keywords:

Deposition, Ellipsometry, Optical Constant, Polycrystalline Si, Stoichiometry, Vertical Reactor

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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