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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52Microstructure Influence on the First Stage of the...

Microstructure Influence on the First Stage of the Oxidation Process in Polycrystalline SiGe Layers

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

199-204

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.199

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Online since:

May 1996

Authors:

J.C. Ferrer, J.J. Pedroviejo, B. Garrido, J.R. Morante, J. Calderer

Keywords:

Oxidation, Silicon-Germanium (SiGe)

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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