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Reconstruction of the Recombination Centre Distribution in Dislocation Impurity Atmosphere in Si
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Transmission Electron Microscopy Studies of Lattice-Mismatched Semiconductor Heterostructures Used for Integrated Optoelectronic Devices
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Electrical and Structural Properties of Solution Grown Silicon Layers on Polycrystalline Silicon Substrates
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Preparation of Low Temperature Polysilicon Films with SiH₄ and SiF₄ Gas Mixtures
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Structural Studies of Annealing Effects on Semi-Insulating Polycrystalline Layers Obtained by Using Disilane
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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52Electrical and Structural Properties of Solution...

Electrical and Structural Properties of Solution Grown Silicon Layers on Polycrystalline Silicon Substrates

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Abstract:

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

143-148

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.143

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Online since:

May 1996

Authors:

B. Steiner, Günter Wagner, Axel Voigt, W. Dorsch, Horst P. Strunk

Keywords:

Grain Boundary, Liquid Phase Epitaxy (LPE), Morpholoy, Polycrystalline Silicon, Recombination Activity

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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