Paper Titles

Microdefects in Polycrystalline Silicon
p.81

Investigations for the Detection of Microdefects in Cast Multicrystalline Silicon
p.87

Dislocation-Related Absorption, Photoluminescence and Birefringence in Deformed n-ZnSe Crystals
p.93

Tight-Binding Total Energy Calculation for Fe, Co and Ni in Silicon
p.99

Polycrystalline Semiconductors: Structure-Property Relationships
p.105

Influence of a Preliminary Phosphorus Diffusion on the Evaluation of the Recombination Strenght of Dislocations in Czochralski Silicon Wafers
p.117

Reconstruction of the Recombination Centre Distribution in Dislocation Impurity Atmosphere in Si
p.123

Transmission Electron Microscopy Studies of Lattice-Mismatched Semiconductor Heterostructures Used for Integrated Optoelectronic Devices
p.131

Electrical and Structural Properties of Solution Grown Silicon Layers on Polycrystalline Silicon Substrates
p.143

HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52Polycrystalline Semiconductors: Structure-Property...

Polycrystalline Semiconductors: Structure-Property Relationships

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

105-116

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.105

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Online since:

May 1996

Authors:

David A. Smith, C.S. Nichols

Keywords:

Breakdown Voltage, Grain Boundary Barriers, Grain Growth, Majority Carrier Lifetime, Micro-Structure Evolution, Minority Carrier Lifetime, Percolation, Varistors

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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