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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52Influence of a Preliminary Phosphorus Diffusion on...

Influence of a Preliminary Phosphorus Diffusion on the Evaluation of the Recombination Strenght of Dislocations in Czochralski Silicon Wafers

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

117-122

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.117

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Online since:

May 1996

Authors:

Isabelle Périchaud, J.J. Simon

Keywords:

Dislocation, Minority Carriers Diffusion Length, Oxygen, Phosphorus Diffusion, Precipitation

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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