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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52Reconstruction of the Recombination Centre...

Reconstruction of the Recombination Centre Distribution in Dislocation Impurity Atmosphere in Si

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

123-130

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.123

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Online since:

May 1996

Authors:

I.E. Bondarenko, O.V. Kononchuk, V. Sirotkin

Keywords:

Dislocation, EBIC, Infrared Beam Induced Current, Point Defect

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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