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Application of Surface Electron Beam Induced Voltage Method for the Contactless Characterization of Semiconductor Structures
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HomeSolid State PhenomenaSolid State Phenomena Vols. 63-64Application of Surface Electron Beam Induced...

Application of Surface Electron Beam Induced Voltage Method for the Contactless Characterization of Semiconductor Structures

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Beam Injection Assessment of Defects in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 63-64)

Pages:

327-332

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.63-64.327

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Online since:

December 1998

Authors:

E.I. Rau, A.N. Zhukov, Eugene B. Yakimov

Keywords:

Defect in Semiconductors, Scanning Electron Microscope (SEM), Semiconductor Characterization

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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