The 5th International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 98) focussed on many theoretical and experimental aspects of this topic. The aim was to bring together specialists working in the fields of both fundamental research and applications. There were more than 80 participants from 15 countries all over the world.

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eBook:

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ToC:

Table of contents

Editors:

M. Kittler, O. Breitenstein, A. Endrös, W. Schröter

DOI:

https://doi.org/10.4028/b-k9MbYB

THEMA:

TGM

BISAC:

TEC021000

Keywords:

Atomic Force Microscope (AFM), Cathodoluminescence, Diffusion Length, Dislocation, DLTS, EBIC, Electron Beam Induced Current (EBIC), Gallium Nitride (GaN), Hydrogen Passivation, II-VI Compounds, LBIC, Minority Carriers, Photoluminescence (PL), Scanning Electron Microscope (SEM), Semiconductor, Silicon, Solar Cell, Surface Recombination, TEM, Zinc Oxide (ZnO)

Details:

Proceedings of the 5th International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 98), held in Parkhotel Schloss Wulkow near Berlin, Germany, August/September 1998

Pages:

550

Year:

1998

ISBN-13 (softcover):

9783908450399

ISBN-13 (CD):

9783038599982

ISBN-13 (eBook):

9783035706826

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