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HomeSolid State PhenomenaSolid State Phenomena Vols. 67-68Wet-Chemically Passivated Silicon Interfaces:...

Wet-Chemically Passivated Silicon Interfaces: Characterization by Surface Photovoltage Measurements, and Spectroscopic Ellipsometry Methods

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Polycrystalline Semiconductors V

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Periodical:

Solid State Phenomena (Volumes 67-68)

Pages:

515-520

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.67-68.515

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Online since:

April 1999

Authors:

Heike Angermann, W. Henrion, A. Röseler, M. Rebien

Keywords:

Ellipsometry, Silicon, Surface Morphology, Surface Photovoltage Measurements, Surface State Distribution

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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