Wet-Chemically Passivated Silicon Interfaces: Characterization by Surface Photovoltage Measurements, and Spectroscopic Ellipsometry Methods

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Periodical:

Solid State Phenomena (Volumes 67-68)

Edited by:

J.H. Werner, H.P. Strunk, H.W. Schock

Pages:

515-520

DOI:

10.4028/www.scientific.net/SSP.67-68.515

Citation:

H. Angermann et al., "Wet-Chemically Passivated Silicon Interfaces: Characterization by Surface Photovoltage Measurements, and Spectroscopic Ellipsometry Methods", Solid State Phenomena, Vols. 67-68, pp. 515-520, 1999

Online since:

April 1999

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