Paper Titles

Influence of Hydrogen Plasma Treatment on Electric Properties of Polycrystalline CdS_xSe_1-x Films
p.509

Wet-Chemically Passivated Silicon Interfaces: Characterization by Surface Photovoltage Measurements, and Spectroscopic Ellipsometry Methods
p.515

Improving the Quality of Polycrystalline Silicon String Ribbon for Fabricating High Efficiency Solar Cells
p.521

Polycrystalline Silicon Thin Film Transistors: State of the Art and Improvement of Electrical Characteristics
p.529

Leakage Current of Unhydrogenated Solid Phase Crystallized Silicon Thin Film Transistors
p.541

Process to Fabricate High Performance Solid Phase Crystallized n-Type and p-Type Thin Film Transistors on Glass Substrate
p.547

An Analytical Model for Rectifying Contacts on Polycrystalline Semiconductors
p.553

Modelling of the Doping Effect on the Capacitance of the Metal/N-Polysilicon/Oxide/N-Silicon Structure
p.559

a-Si/c-Si Heterojunctions as a Tool to Realise Solar Cells Based on Thin Poly-Silicon Growth on Glass
p.565

HomeSolid State PhenomenaSolid State Phenomena Vols. 67-68Leakage Current of Unhydrogenated Solid Phase...

Leakage Current of Unhydrogenated Solid Phase Crystallized Silicon Thin Film Transistors

Article Preview

Abstract:

You might also be interested in these eBooks

Polycrystalline Semiconductors V

Info:

Periodical:

Solid State Phenomena (Volumes 67-68)

Pages:

541-546

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.67-68.541

Citation:

Cite this paper

Online since:

April 1999

Authors:

B. Tala-Ighil, A. Rahal, H. Toutah, T. Mohammed-Brahim, K. Mourgues, O. Bonnaud

Keywords:

Active Matrix Device, Solid Phase Crystallization, Thin Film Transistor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1999 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: