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HomeSolid State PhenomenaSolid State Phenomena Vols. 67-68An Analytical Model for Rectifying Contacts on...

An Analytical Model for Rectifying Contacts on Polycrystalline Semiconductors

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Abstract:

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Polycrystalline Semiconductors V

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Periodical:

Solid State Phenomena (Volumes 67-68)

Pages:

553-558

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.67-68.553

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Online since:

April 1999

Authors:

U. Rau, Jens Werner

Keywords:

Capacitance, Grain Boundary, Schottky Contact, Tunneling

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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