Properties of p-n Diodes Made in Polysilicon Layers with Intermediate Grain Size

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Periodical:

Solid State Phenomena (Volumes 67-68)

Edited by:

J.H. Werner, H.P. Strunk, H.W. Schock

Pages:

577-582

DOI:

10.4028/www.scientific.net/SSP.67-68.577

Citation:

G. Beaucarne et al., "Properties of p-n Diodes Made in Polysilicon Layers with Intermediate Grain Size", Solid State Phenomena, Vols. 67-68, pp. 577-582, 1999

Online since:

April 1999

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$35.00

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