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HomeSolid State PhenomenaSolid State Phenomena Vols. 67-68Properties of p-n Diodes Made in Polysilicon...

Properties of p-n Diodes Made in Polysilicon Layers with Intermediate Grain Size

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Abstract:

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Polycrystalline Semiconductors V

Info:

Periodical:

Solid State Phenomena (Volumes 67-68)

Pages:

577-582

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.67-68.577

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Online since:

April 1999

Authors:

G. Beaucarne, Jef Poortmans, Matty Caymax, J. Nijs, A. Mertens

Keywords:

Chemical Vapor Deposition (CVD), p-n Diodes, p-n Junction Recombination, Solar Cell

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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