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HomeSolid State PhenomenaSolid State Phenomena Vols. 67-68W-Polycide Gates with a Thin Polysilicon Layer:...

W-Polycide Gates with a Thin Polysilicon Layer: Microstructure and Resistivity

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Polycrystalline Semiconductors V

Info:

Periodical:

Solid State Phenomena (Volumes 67-68)

Pages:

583-0

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.67-68.583

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Online since:

April 1999

Authors:

Y.O. Kim, J. Bevk, M. Furtsch, G.E. Georgiou, W. Mansfield, R. Masaitis, R. Opila, P.J. Silverman

Keywords:

Gate Materials, Refractory Metal Silicide, Sheet Resistance, Tungsten Polycide

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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