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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70The Origin and Efficiency of Dislocation...

The Origin and Efficiency of Dislocation Luminescence in Si and its Possible Application in Optoelectronics

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

23-32

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.23

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Online since:

August 1999

Authors:

E.A. Steinman, Vitaly V. Kveder, V.I. Vdovin, Hermann G. Grimmeiss

Keywords:

Dislocation, Light Emission, Optoelectronics, SiGe/ Si Relaxation, Silicon

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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