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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Growth-Defects and Process-Induced Defects in...

Growth-Defects and Process-Induced Defects in SiGe-Based Heterostructures

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

43-52

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.43

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Online since:

August 1999

Authors:

Arne Nylandsted Larsen

Keywords:

Defect, Silicon-Germanium (SiGe), Strain Relaxed

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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