Grown-in Defects in High Temperature Annealed Si Wafers

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Periodical:

Solid State Phenomena (Volumes 69-70)

Edited by:

H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter

Pages:

73-82

DOI:

10.4028/www.scientific.net/SSP.69-70.73

Citation:

N. Tsuchiya et al., "Grown-in Defects in High Temperature Annealed Si Wafers", Solid State Phenomena, Vols. 69-70, pp. 73-82, 1999

Online since:

August 1999

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Price:

$35.00

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