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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Grown-in Defects in High Temperature Annealed Si...

Grown-in Defects in High Temperature Annealed Si Wafers

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

73-82

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.73

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Online since:

August 1999

Authors:

N. Tsuchiya, Hideyoshi Matsushita, J. Sugamoto, Akira Kawasaki, Hiroshi Kubota

Keywords:

COP, Grown-in Defects, High Temperature Annealing, Hydrogen, LSTD, Silicon, Void

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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