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Grown-in Defects in High Temperature Annealed Si Wafers
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Hydrogen Platelets in Crystalline Silicon - Precursors for the 'Smart Cut'
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Relaxation of Misfit Induced Strain in Si-Based Heterostructures
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Materials Quality and Materials Cost - Are they on a Collision Course?
p.103

Defect Engineering in the Development of Advanced Silicon Crystals and Wafers
p.111

200 GHz Potential of Si-Based Devices
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Silicon Materials Engineering for the Next Millennium
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Electrical Characterization of As-Grown and Thermally Treated 8'' Silicon Wafers
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Equilibrium Critical Thickness of Strained Buried SiGe Layers
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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Defect Engineering in the Development of Advanced...

Defect Engineering in the Development of Advanced Silicon Crystals and Wafers

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

111-120

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.111

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Online since:

August 1999

Authors:

Jan Vanhellemont

Keywords:

Annealed Wafer, COP, Czochralski Silicon, Denuded Zones, GOI, Grown-in Defects, Internal Gettering, RTA, Silicon Oxide (SiO), Void

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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