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Improved Microwave Absorption Technique for Bulk and Surface Lifetime Analysis in Processed Si Wafers
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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Electrical Characterization of As-Grown and...

Electrical Characterization of As-Grown and Thermally Treated 8'' Silicon Wafers

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

143-148

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.143

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Online since:

August 1999

Authors:

Antonio Castaldini, Daniela Cavalcoli, Anna Cavallini, Sergio Pizzini, E. Susi

Keywords:

Deep Level, Diffusion Length, Surface Recombination Velocity

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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