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Materials Quality and Materials Cost - Are they on a Collision Course?
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Defect Engineering in the Development of Advanced Silicon Crystals and Wafers
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200 GHz Potential of Si-Based Devices
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Silicon Materials Engineering for the Next Millennium
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Electrical Characterization of As-Grown and Thermally Treated 8'' Silicon Wafers
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Equilibrium Critical Thickness of Strained Buried SiGe Layers
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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70200 GHz Potential of Si-Based Devices

200 GHz Potential of Si-Based Devices

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

121-130

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.121

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Online since:

August 1999

Authors:

Uwe König

Keywords:

Bipolar Transistor, Field-Effect Transistor, Frequency, Gate Delay, Low Temperature Operation, Noise, Silicon Germanium

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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