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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Equilibrium Critical Thickness of Strained Buried...

Equilibrium Critical Thickness of Strained Buried SiGe Layers

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

149-154

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.149

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Online since:

August 1999

Authors:

A. Fischer, G. Kissinger, Hans Richter, P. Zaumseil

Keywords:

Critical Thickness, Equilibrium Theory, SiGe Heteroepitaxy, Strained Layer

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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