Paper Titles

Equilibrium Critical Thickness of Strained Buried SiGe Layers
p.149

Improved Microwave Absorption Technique for Bulk and Surface Lifetime Analysis in Processed Si Wafers
p.155

Defect Control in Nitrogen Doped Czochralski Silicon Crystals
p.161

Growth and Characteristics of Low Trap Density Ultrathin [4-7 nm] Gate Oxides for SiGe Quantum Well MOS Structures
p.167

Interaction of Crystal Defects with p-n Junctions in Multicrystalline Si Solar Cells
p.173

Interaction between Point Defects and Dislocations in SiGe
p.179

Radiation Induced Defect Levels in Highly Doped n-Type Si_1-xGe_x Strained Layers
p.185

ESR Investigations of Modulation-Doped Si/SiGe Quantum Wells
p.191

Shallower Thermal Donor and Nitrogen-Oxygen Complex in Nitrogen Doped Czochralski Silicon
p.197

HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Interaction of Crystal Defects with p-n Junctions...

Interaction of Crystal Defects with p-n Junctions in Multicrystalline Si Solar Cells

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

173-178

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.173

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Online since:

August 1999

Authors:

O. Krüger, Martin Kittler, C. Häßler, Wolfgang Koch

Keywords:

Baysix^®, EBIC, Foils, Grain Boundary, Multicrystalline, Photovoltaic (PV), Pipe Diffusion, P-N Junction, RGS, Ribbons, Secondary Electrons, Silicon, Solar Cell

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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